Silicon Wafer Materials

Silicon wafers are a matter of precision work. Silicon wafers form the basis of the most complex electronic components — from thyristors for high-voltage applications, through low-ohm circuit elements in automotive engineering and telecommunications, to large-scale integrated microprocessors and memory modules for information processing. Our longstanding cooperation and relationships with silicon wafer suppliers, which have grown over the years, have provided us with an in-depth knowledge of our customers and their requirements. Wherever possible, we strive to surpass our customers' expectations through specially tailored products and services. This strong customer orientation is reflected in a high level of appreciation and in our sound relationships with business partners. Please view our partial inventory listing or complete our Request a Quote form for NOVA to supply your needs!

We offer silicon wafer products such as:

  1"-2" Wafers
3" Wafers
4" Wafers
5" Wafers
6" Wafers
8" Wafers 		  12" Wafers
Ingot
Float Zone (FZ) Wafers
SOI (Silicon-On-Insulator) Wafers
Epi Wafers
Solar Wafers



If you see an item that you would like us to give you a quote on, check the "Add Cart" boxes. When you have all the items selected that you would like a quote for, click on the Quote Cart button. Please browse through one of our silicon wafer product categories to view our partial inventory for immediate delivery.


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NOVA offers the best competitive pricing without sacrificing quality. No order is too big or too small for us to handle. Contact Us today.






1"-2" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
HS18810 88 1" N <100> 1 10 660 711 Test
    w/ Rectangle to "U" Shape Notch & 3,000 A° ±5% Thermal Oxide.
8289 75 2" P <100> 1 10 254 306 Test
    w/ Primary Flat only.
HS4962210 700 2.5" N <100> .14 .23 Ingot
    Ground
 

3" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
7395 1625 3" N <100> 1 10 356 406 Prime
    with Primary Flat Only & 3,000 Ang. ±5% Thermal Oxide
8445 200 3" N <111> 6 12 245 325 FZ
    Test
BC3032 73 3" N <111> .05 .1 300 406 As-cut
    Coin-roll
WC3048 150 3" N <111>off3-4° .005 .05 355 405 Prime
    SSP w/2 Semi-Std. Flats
BC88996 173 3" N <111>off3-4° >.01 356 406 Epi
    Prime , Epi layer= 7.5-10 ohm-cm 20-25µm
NPO7164 625 3" N <100> >20 431 483 DSP
    Test w/2 Semi-Std. Flats
WC37192 75 3" N <100> >20 381 483 Test
    with Semi Flats
WC37620-NV 100 3" N <100> 1 10 356 406 Prime
    w/Primary Flat Only
7244-69 1400 3" P <100> .01 .05 Ingot
    As-grown.
BC17967 2600 3" P <111> .014 .02 Ingot
    Ground & Flatted per U.S. Stds.
WC27806 125 3" P <100> 1 10 356 406 Prime
    w/2 Semi-Std Flats
7244-1272 2300 3" P <111> <10 Ingot
    Ground, Flat & Mounted
WC5201~P1 10 3" P <100> 1 10 575 625 DSP
    Prime w/Semi-Std. Flats & TTV </= 2.5µm
CP02-11208 325 3" P <100> .001 .005 356 406 Prime
    w/2 Semi-Std. Flats
CP17-10041 10200 3" P <100> 1 10 Ingot
    Ground w/0 Flats or 2 Flats per Semi-Stds.
CA05-11645 475 3" Any 508 534
    3" Any Type, Orientation, Resistivity, 508-534µm Thick As-Cut Non Edge-rounded w/2 Semi-Std. Flats, Rinse SC1 Clean & Dry.
CP03-10685 450 3" Any <Any> Any 575 625 Test
    w/2 Semi-Std. Flats
HC40561 28 3" N/Ph <110> Ge
    As-cut Edgerounded Wafer w/2 Flats
7244-2718-923 15900 3" N/Sb <111> .005 .05 Ingot
    As-grown Ground & Flatted
CA02-10016 3 3" N(Te) <100> 480 520 GaAs
    Wafer, cc:2.3E18, Mobility: 2370, EPD: 4E4, w/1 Flat & TTV <3µm.
 

4" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
HC44001 13 4" N <111> 5 50 635 686 Ge
    As-cut Wafer
HC44002 15 4" N <111> 5 40 762 813 Ge
    As-cut Wafer
HC44003 49 4" N <111> 5 40 762 813 Ge
    As-cut Wafer
HC44004 12 4" N <Any> 5 40 1016 1067 Ge
    As-cut Coin-rolled Wafer
STK8414 500 4" N <100> 1 10 500 550 Prime
    w/2 Semi-Std. Flats
4N0-10848 4 4" N <100>±1° >5000 125 160 FZ
    DSP w/Primary Flat ,TTV <6µm, Bow/Warp <20µm
4N0-10854 17 4" N <100>±1° >5000 173 187 FZ
    Lapped, Etched & Edgerounded, w/Semi-Std. Primary Flat, TTV <6µm, Bow & Warp <20µm
7244-4682-126A 4000 4" N <111> <.020 Ingot
    As-grown Phosphorus doped
7358 50 4" P <100> 5 25 500 550 Prime
    w/2 Semi-Std. Flats
7375 450 4" P <100> 1 25 475 575 Test
    w/2 Flats, LPD's <30 @.5µm
GC38892 27415 4" P <100> 1.3 3.7 Ingot
    Ground 1Flat per U.S. Semi-Stds.
HC49138 4400 4" P <111> .0015 .0035 Ingot
    Ground, flatted & mounted
HS39626 425 4" P <100> .001 .005 500 550 Prime
    w/Semi-Std Flats
SOI11000 7 4" P <100> 1 10 280 320 SOI
    CZ Handle DSP w/o oxide, Box: 1.4-2.1µm Thermal, Device 1-10 ohm-cm 35-40µm, TTV <10µm
WC673581 100 4" P <100> 8 22 365 385 DSP
    Prime w/2 Sem-Std. Flats
GC38892-2 7140 4" P <100> 1.3 4.1 Ingot
    Ground 2 Flats per U.S. Semi-Stds.
STK8414-2 450 4" P <100> 1 10 500 550 Prime
    w/2 Semi-Std. Flats
HS39626-OX 25 4" P <100> .001 .005 500 550 Prime
    w/Semi-Std Flats & Thermal Oxide
4A01-11732 497 4" x
    4" x 4" x 0.70mm Glass Borosilicate Wafer No Bevels, Surface Quality 80/50
HC22001 23 4" N+ <Any> .0015 .003 Any Epi
    Layer N w/Any Resistivity & Thickness
7244-6014-859 7500 4" N+ <100> Any Ingot
    As-grown, Arsenic doped, Ground & Flatted
 

5" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
7479-1 409 5" N <100> 1 10 380 405 Etched
    Edge-rounded, Coin-rolled w/ 2 Semi-std Flats & LM
EN1-11139 50 5" N <111>off2-3° 4 7 600 650 Prime
    w/ Primary Flat only
EN03-SOI9554 17 5" N <100>±1° 3 10 620 630 SOI
    FZ Handle SSP, Box .425-.475µm Thermal Oxide, Device 2.3-2.5 ohm-cm, 19-21µm Thick w/2 Flats
EN03-10345 25 5" N <100>±1° 3 10 615 630 Prime
    w/Primary Flat Only TTV <2µm, B & W<40
EN03-10346 50 5" N <100>± 2.5 5.5 615 635 Prime
    w/ Primary Flat Only TTV<2µm, B & W<40
7387 89 5" P <100> 42 52.1 725 750 As-cut
    w/2 Flats, Primary Flat has V-notch
6416M 4009 5" P <100> .087 .092 Ingot
    Ground, Flatted w/2 Flats, V-notch on Primary Flat
73871 44 5" P <100> >100 630 730 Lapped
    Edge-rounded Coin-rolled w/2 Flats, Primary Flat has V-notch
7285-2 50 5" P <111> .01 .02 600 650 Prime
    w/Primary Flat & Etched backs
7479-3 108 5" P <100> 1 10 380 405 Etched
    Edge-rounded Coinrolled w/2 Flats & LM
7244-6691-2B 4100 5" P <100> <=.02 Ingot
    Ground w/2 Flats
GC211001-4 163 5" P <100> .01 .02 600 700 Etched
    Coinrolled w/Primary Flat Only & Oxide backseal
7244-6013-427 2535 5" N+ <111> <=.007 Ingot
    Ground, Flatted & Mounted, Arsenic doped
7244-6013-633 20524 5" N+ <111> .001 .01 Ingot
    As-grown Arsenic doped with 3 Flats
 

6" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
FA01-9900 4 6" x.75mm Pyrex
    wafers with Edges Seamed, for Customer Evaluation of Edge Seam vs. Bevel (pencil).
WC109484 1500 6" N <110> 1 10 Ingot
    Ground w/ U.S. Primary Flat Only
GC38892-5 203335 6" N <100> .025 .07396 Ingot
    Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
HS39560-2 50 6" N <100> >1000 1143 1169 FZ
    DSP w/Primary Flat Only
FN05-11654 75 6" N <100> 0 100 575 700 Test
    w/ Primary Flat only.
FN06-11446 25 6" N <100> >1000 1143 1168.4 FZ
    DSP w/Primary Flat Only with 3,000 A°±5% Thermal Ox. & 1500A LPCVD SiN (handled w/tweezers)
FP02-10467 9 6" N <100> .008 .02 165 191 Test
    w/Primary Flat Only & TTV </= 8µm, Coin-roll w/paper
7448 75 6" P <100> .5 50 645 705 Test
    w/ US Primary Flat Only & 2,000 Ang.±5% Thermal Oxide
7467 44 6" P <100> 5 30 625 725 Test
    w/Primary Flat Only & TTV <10, B & W <60µm Particles <10@.3µm
7296~P1 25 6" P <100> 1000 2000 650 700 FZ
    DSP
BC38330 981 6" P <100> Any >=550 Reclaim
   
GC49266 600 6" P <100> .005 .08 1175 1225 Prime
    DSP w/V-Notch per U.S.Semi-Stds. & TTV <3µm.
HS18854 25 6" P <100> 1 30 650 700 Prime
    w/Std. Notch, TTV <= 5µm
HS38780 75 6" P <100> .5 50 645 705 Test
    w/Primary Flat Only & 10,000 A°±5% Thermal Oxide
HS89121 225 6" P <100> 0 100 1150 1350 Prime
    SSP w/ Std.Notch, TTV <= 3µm
WC78987 325 6" P <100> 1 50 650 700 Prime
    w/ Primary Flat Only & TTV <5µm
WC99755 25 6" P <100> >1 710 740 Test
    w/Primary Flat Only & Etched Backs
FP04-10107 300 6" P <100> 0 100 600 700 Test
    w/ Notch Only & 3,000 Ang. ± 5% Thermal Oxide
FP06-11973 450 6" P <100> 0 100 600 700 Test
    w/Primary Flat Only
FP14-12522 100 6" P <100> 0 100 600 700 Test
    with Std. Notch
FP16-18828 1854 6" P <100> 0 100 600 700
    6" P <100> 0-100 ohm-cm 600-700µm Thick SSP w/ Notch Only
FP39-12574 150 6" P <100> >3,000 650 700 FZ
    Prime SSP w/Primary Flat Only, TTV <5µm
HP01-11598 2100 6" P <100> 1 50 650 700 Prime
    w/ Primary Flat only & LM on Frontside on Flat.
3162085 6000 6" Any <Any> Any Ingot
    As-grown
STK9281 7745 6" Any <Any> 0 100 Any Etched
    Coinrolled with Primary Flat Only.
FA01-11810 150 6" Any
    6" Any Type, Orientation, Resistivity & Thickness with Notch & Surface Defects, Particles <50 @ .5µm
FN02-12565 2 6" N/Sb <100> .025 .074 1325 1375 DSP
    Prime w/Primary Flat Only
FP31-12277 24 6" P/Bo <100> <.005 600 650 Test
    w/ Primary Flat Only
 

8" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
GN16-12341 50 8" N <100> >5000 700 750 FZ
    Prime SSP with Std. Notch
IN08-11685 64 8" N <100> 1 30 700 750
    8" N <100> 1-30 ohm-cm 700-750µm Thick SSP w/Std. Notch & 3,000 A° ± 10% Thermal Oxide
IN08-11860 50 8" N <100> 1 30 700 750
    8" N <100> 1-30 ohm-cm 700-750µm Thick SSP w/Std. Notch
5196 50 8" P <100> .001 .01 700 750
    8" P <100> .001-.01 ohm-cm 700-750µm Thick SSP w/Notch & Frontside Lasermark.
9911 150 8" P <100> 9 18 712 762 DSP
    w/Std. Notch & LM per U.S. Semi-Std.
7574-1 1825 8" P <100> .5 100 700 750 Test
    w/Notch & LM per Semi-Std.
HS18590 150 8" P <100> 0 100 760 890 Test
   
STX10299 25 8" P <100> 1 100 700 750 Test
    SSP with Flat
STK9500-2 450 8" P <100> 1 100 700 750 Prime
    SSP w/Std. Notch & LM.
HP01-T200SSP 75 8" P <100> 0 100 700 750 Test
    w/Std. Notch and backseal
GC19195 10 8" Any <100> 0 100 650 750 Test
    w/Std. Notch, Particles <100 @.3µm
JK-11811 1050 8" Any <100> 0 300 675 775
    8" Any Type <100> 0-300 ohm-cm, 675-775µm Thick, SSP with Std. Notch only.
GN18-12648 25 8" N/As <100> .003 .005 700 750
    8" N/As <100> .003-.005 ohm-cm 700-750µm Thick SSP with Notch 45° from <110>
 

12" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
STK9754 25 12" P <100> 1 100 750 800 Prime
    w/Std Notch & No LM
PP01-9818 75 12" P <100>±1° 1 100 750 800 Litho
    w/Std. Notch & Semi-T7 LM
NP01-T300S 350 12" P <100> 1 100 750 800 Mechanical
    with Notch
 

Float Zone Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
 

Ingot Wafer Listing

 Top of Page Quote Cart Print Ingot Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
HS4962210 700 2.5" N <100> .14 .23 Ingot
    Ground
7244-69 1400 3" P <100> .01 .05 Ingot
    As-grown.
BC17967 2600 3" P <111> .014 .02 Ingot
    Ground & Flatted per U.S. Stds.
7244-1272 2300 3" P <111> <10 Ingot
    Ground, Flat & Mounted
CP17-10041 10200 3" P <100> 1 10 Ingot
    Ground w/0 Flats or 2 Flats per Semi-Stds.
7244-2718-923 15900 3" N/Sb <111> .005 .05 Ingot
    As-grown Ground & Flatted
7244-4682-126A 4000 4" N <111> <.020 Ingot
    As-grown Phosphorus doped
GC38892 27415 4" P <100> 1.3 3.7 Ingot
    Ground 1Flat per U.S. Semi-Stds.
HC49138 4400 4" P <111> .0015 .0035 Ingot
    Ground, flatted & mounted
GC38892-2 7140 4" P <100> 1.3 4.1 Ingot
    Ground 2 Flats per U.S. Semi-Stds.
7244-6014-859 7500 4" N+ <100> Any Ingot
    As-grown, Arsenic doped, Ground & Flatted
6416M 4009 5" P <100> .087 .092 Ingot
    Ground, Flatted w/2 Flats, V-notch on Primary Flat
7244-6691-2B 4100 5" P <100> <=.02 Ingot
    Ground w/2 Flats
7244-6013-427 2535 5" N+ <111> <=.007 Ingot
    Ground, Flatted & Mounted, Arsenic doped
7244-6013-633 20524 5" N+ <111> .001 .01 Ingot
    As-grown Arsenic doped with 3 Flats
WC109484 1500 6" N <110> 1 10 Ingot
    Ground w/ U.S. Primary Flat Only
GC38892-5 203335 6" N <100> .025 .07396 Ingot
    Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
3162085 6000 6" Any <Any> Any Ingot
    As-grown
 

Float Zone Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
8445 200 3" N <111> 6 12 245 325 FZ
    Test
4N0-10848 4 4" N <100>±1° >5000 125 160 FZ
    DSP w/Primary Flat ,TTV <6µm, Bow/Warp <20µm
4N0-10854 17 4" N <100>±1° >5000 173 187 FZ
    Lapped, Etched & Edgerounded, w/Semi-Std. Primary Flat, TTV <6µm, Bow & Warp <20µm
HS39560-2 50 6" N <100> >1000 1143 1169 FZ
    DSP w/Primary Flat Only
FN06-11446 25 6" N <100> >1000 1143 1168.4 FZ
    DSP w/Primary Flat Only with 3,000 A°±5% Thermal Ox. & 1500A LPCVD SiN (handled w/tweezers)
7296~P1 25 6" P <100> 1000 2000 650 700 FZ
    DSP
FP39-12574 150 6" P <100> >3,000 650 700 FZ
    Prime SSP w/Primary Flat Only, TTV <5µm
GN16-12341 50 8" N <100> >5000 700 750 FZ
    Prime SSP with Std. Notch
 

Epi Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
BC88996 173 3" N <111>off3-4° >.01 356 406 Epi
    Prime , Epi layer= 7.5-10 ohm-cm 20-25µm
HC22001 23 4" N+ <Any> .0015 .003 Any Epi
    Layer N w/Any Resistivity & Thickness
 
 

SOI (Silicon-On-Insulator) Wafer Listing

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SOI material is used widely in applications such as telecommunication products and optical devices, dielectrically isolated integrated circuits, solid state relays and micro-machined components for sensors and actuators.

NOVA offers an innovative and powerful through-wafer interconnect technology which can allow device designers in both standard IC and MEMS device industries overcome packaging problems associated with their designs. NOVA offers a fully customized engineered substrate solution to minimize your fabrication headaches.

Typical Diameters range from 4" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Epitaxial Wafer Listing

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Epitaxial silicon wafers are made through the precipitation of a monocrystalline silicon coat. The substratum consists of a polished silicon wafer.

Epitaxial wafers are used for discrete applications and, because of their extraordinary quality as semiconductors, for the manufacturing of the most progressive and highly integrated semiconductor construction elements (ICs).

Typical Diameters range from 3" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Solar Wafer Listing

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NOVA creates significant competitive advantages, in terms of cost and quality, which are passed through the value chain of the entire silicon-based solar cell manufacturing market. The resulting single crystal wafers are manufactured and sold to meet the growing demands of the photovoltaic industry's major solar cell and module manufacturers, helping to further satisfy rapidly expanding end-user demand currently growing by 35 percent per year. Because NOVA's sources are designed for very high volume materials handling, as opposed to traditional precision semiconductor manufacturing that has been used to service the photovoltaic industry's silicon wafer needs in the past, NOVA can allow far better utilization of raw silicon feedstock at significantly lower cost within the supply chain.

Typical Diameters range from 3" to 125mm psuedo square to 300mm. Please contact NOVA's specialist or complete our Request a Quote form with your specifications so NOVA can quote your needs!