Silicon Wafer Materials

Silicon wafers are a matter of precision work. Silicon wafers form the basis of the most complex electronic components — from thyristors for high-voltage applications, through low-ohm circuit elements in automotive engineering and telecommunications, to large-scale integrated microprocessors and memory modules for information processing. Our longstanding cooperation and relationships with silicon wafer suppliers, which have grown over the years, have provided us with an in-depth knowledge of our customers and their requirements. Wherever possible, we strive to surpass our customers' expectations through specially tailored products and services. This strong customer orientation is reflected in a high level of appreciation and in our sound relationships with business partners. Please view our partial inventory listing or complete our Request a Quote form for NOVA to supply your needs!

We offer silicon wafer products such as:



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NOVA offers the best competitive pricing without sacrificing quality. No order is too big or too small for us to handle. Contact Us today.






1"-2" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
HS18810 63 1" N <100> 1 10 660 711 Test
    w/ Rectangle to "U" Shape Notch & 3,000 A° ±5% Thermal Oxide.
8289 175 2" P <100> 1 10 254 306 Test
    w/ Primary Flat only.
7244-232 149 2" P/Bo <100> .003 .005 254 305
    2" P/Bo <100> .003-.005 ohm-cm 254-305µms Thick SSP w/2 Semi-Std. Flats
HS4962210 700 2.5" N <100> .14 .23 Ingot
    Ground
 

3" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
7395 304 3" N <100> 1 10 356 406 Prime
    with Primary Flat Only & 3,000 Ang. ±5% Thermal Oxide
8445 200 3" N <111> 6 12 245 325 FZ
    Test
BC3032 73 3" N <111> .05 .1 300 406 As-cut
    Coin-roll
WC3048 150 3" N <111>off3-4° .005 .05 355 405 Prime
    SSP w/2 Semi-Std. Flats
BC17775 1526 3" N <100> 1 10 432 457 Lapped
    Edge-rounded w/1 Flat
BC88996 173 3" N <111>off3-4° >.01 356 406 Epi
    Prime , Epi layer= 7.5-10 ohm-cm 20-25µm
NPO7164 625 3" N <100> >20 431 483 DSP
    Test w/2 Semi-Std. Flats
NPO7288 639 3" N <100> >20 515±10 Etched
    Edge-rounded with Semi Flats
WC37192 232 3" N <100> >20 381 483 Test
    with Semi Flats
WC67298 3539 3" N <100> >20 455±10 Etched
    Edge-rounded with Semi Flats
CN01-10274 23 3" N <100>±.5° >3000 355 405 FZ
    Prime w/Primary Flat Only
CNE1-13067 741 3" N <100>±.5° >3000 445±10 FZ
    Etch/Etch w/Primary Flat Only
WC37620-NV 63 3" N <100> 1 10 356 406 Prime
    w/Primary Flat Only
WC37620-OX 50 3" N <100> 1 10 356 406 Prime
    w/2 Semi-Std. Flats & 3,000 A° ± 5% Thermal Oxide.
WC6163 400 3" P <100> .2 5 >250 Test
    Round , No Flat
7244-69 1400 3" P <100> .01 .05 Ingot
    As-grown.
BC17967 2600 3" P <111> .014 .02 Ingot
    Ground & Flatted per U.S. Stds.
WC27806 150 3" P <100> 1 10 356 406 Prime
    w/2 Semi-Std Flats
WC37260 1500 3" P <100> 1 25 625 645
    3" P <100> 1-25 ohm-cm 625-645µm Thick Etch/Etch w/2 Semi-Std. Flats
7244-1272 2300 3" P <111> <10 Ingot
    Ground, Flat & Mounted
CP01-10973 124 3" P <100> .001 .005 390 410 Etched
    /Etched, ER w/2 Flats
CP02-11208 450 3" P <100> .001 .005 356 406 Prime
    w/2 Semi-Std. Flats
CP15-10527 547 3" P <100> 0 100 360 410
    3" P <100> 0-100 ohm-cm 360-410µm Thick Etch/Etch, ER w/2 Semi-Std. Flats
CP17-10041 10200 3" P <100> 1 10 Ingot
    Ground w/0 Flats or 2 Flats per Semi-Stds.
CA05-11645 275 3" Any 508 534
    3" Any Type, Orientation, Resistivity, 508-534µm Thick As-Cut Non Edge-rounded w/2 Semi-Std. Flats, Rinse SC1 Clean & Dry.
HC40561 24 3" N/Ph <110> Any and Ge
    As-cut Edgerounded Wafer w/2 Flats
7244-2718-923 15900 3" N/Sb <111> .005 .05 Ingot
    As-grown Ground & Flatted
 

4" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
7497-B 275 4" N <111> 2 12 500 550
    4" N <111> 2-12 ohm-cm 500-550µm Thick SSP
HC44001 13 4" N <111> 5 50 635 686 Ge
    As-cut Wafer
HC44002 15 4" N <111> 5 40 762 813 Ge
    As-cut Wafer
HC44003 49 4" N <111> 5 40 889 940 Ge
    As-cut Wafer
HC44004 12 4" N <Any> 5 40 1016 1067 Ge
    As-cut Coin-rolled Wafer
STK8414 250 4" N <100> 1 10 500 550 Prime
    w/2 Semi-Std. Flats
MS847A01 24 4" N <111> 5 10 500 550 FZ
    SSP w/2 Semi-Std. Flats
4N0-10848 3 4" N <100>±1° >5000 125 160 FZ
    DSP w/Primary Flat ,TTV <6µm, Bow/Warp <20µm
4N0-10854 14 4" N <100>±1° >5000 173 187 FZ
    Lapped, Etched & Edgerounded, w/Semi-Std. Primary Flat, TTV <6µm, Bow & Warp <20µm
7244-4682-126A 4000 4" N <111> <.020 Ingot
    As-grown Phosphorus doped
DN03-10624 175 4" N <100> .001 .005 500 550 Prime
    w/2 Semi-Std. Flats
7358 75 4" P <100> 5 25 500 550 Prime
    w/2 Semi-Std. Flats
7375 1150 4" P <100> 1 25 475 575 Test
    w/2 Semi-Std Flats
BC79114 50 4" P <100> 1 10 500 550 DSP
    w/2 Semi-Std. Flats
GC38892 15900 4" P <100> 1.3 3.7 Ingot
    Ground 1Flat per U.S. Semi-Stds.
HC49138 4400 4" P <111> .0015 .0035 Ingot
    Ground, flatted & mounted
HS19155 73 4" P <111> .0015 .005 241.3 266.7 Prime
    w/Primary Flat Only & Parallelism </=20µm
HS39626 500 4" P <100> .001 .005 500 550 Prime
    w/Semi-Std Flats
DP07-095 250 4" P <111>±1° .024 .045 310 330 Prime
    ER & Lapped w/Primary Flat Only
SOI11000 7 4" P <100> 1 10 280 320 SOI
    CZ Handle DSP w/o oxide, Box: 1.4-2.1µm Thermal, Device 1-10 ohm-cm 35-40µm, TTV <10µm
WC673581 75 4" P <100> 8 22 365 385 DSP
    Prime w/2 Sem-Std. Flats
GC38892-2 7140 4" P <100> 1.3 4.1 Ingot
    Ground 2 Flats per U.S. Semi-Stds.
STK8414-2 775 4" P <100> 1 10 500 550 Prime
    w/2 Semi-Std. Flats
4A01-11732 497 4" x
    4" x 4" x 0.70mm Glass Borosilicate Wafer No Bevels, Surface Quality 80/50. (Schott D-263)
HC22001 23 4" N+ <Any> .0015 .003 Any Epi
    Layer N w/Any Resistivity & Thickness
7244-6014-859 7500 4" N+ <100> Any Ingot
    As-grown, Arsenic doped, Ground & Flatted
CN05-13248 50 4" N/Ph <100> .1 1.0 500 550 FZ
    Prime SSP w/2 Semi-Std. Flats
 

5" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
7479-1 305 5" N <100> 1 10 380 405 Etched
    Edge-rounded, Coin-rolled w/ 2 Semi-std Flats & LM
EN1-11139 50 5" N <111>off2-3° 4 7 600 650 Prime
    w/ Primary Flat only
EN03-SOI9554 17 5" N <100>±1° 3 10 620 630 SOI
    FZ Handle SSP, Box .425-.475µm Thermal Oxide, Device 2.3-2.5 ohm-cm, 19-21µm Thick w/2 Flats
EN03-10345 25 5" N <100>±1° 3 10 615 630 Prime
    w/Primary Flat Only TTV <2µm, B & W<40
EN03-10346 50 5" N <100>± 2.5 5.5 615 635 Prime
    w/ Primary Flat Only TTV<2µm, B & W<40
7387 89 5" P <100> 42 52.1 725 750 As-cut
    w/2 Flats, Primary Flat has V-notch
6416M 4009 5" P <100> .087 .092 Ingot
    Ground, Flatted w/2 Flats, V-notch on Primary Flat
73871 44 5" P <100> >100 630 730 Lapped
    Edge-rounded Coin-rolled w/2 Flats, Primary Flat has V-notch
7285-2 50 5" P <111> .01 .02 600 650 Prime
    w/Primary Flat & Etched backs
7479-3 108 5" P <100> 1 10 380 405 Etched
    Edge-rounded Coinrolled w/2 Flats & LM
7244-6691-2B 4100 5" P <100> <=.02 Ingot
    Ground w/2 Flats
GC211001-4 153 5" P <100> .01 .02 600 700 Etched
    Coinrolled w/Primary Flat Only & Oxide backseal
7244-6013-427 2535 5" N+ <111> <=.007 Ingot
    Ground, Flatted & Mounted, Arsenic doped
7244-6013-633 20524 5" N+ <111> .001 .01 Ingot
    As-grown Arsenic doped with 3 Flats
 

6" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
FA01-9900 4 6" x.75mm Pyrex
    wafers with Edge Seam, Round No Flat
HS18158 25 6" N <100> 1 10 650 700
    6" N <100> 1-10 ohm-cm, 650-700µm Thick SSP w/Primary Flat Only
WC109484 1500 6" N <110> 1 10 Ingot
    Ground w/ U.S. Primary Flat Only
GC38892-5 173895 6" N <100> .025 .07396 Ingot
    Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
HS39560-2 50 6" N <100> >1000 1143 1169 FZ
    DSP w/Primary Flat Only
FN06-10733 875 6" N <100> 4 7 600 650 Prime
    w/Primary Flat Only & LM
FN06-11446 25 6" N <100> >1000 1143 1168.4 FZ
    DSP w/Primary Flat Only w/3000A° ±5% Thermal Oxide, 1500A° ±5% LPCVD SiN
7467 19 6" P <100> 5 30 625 725 Test
    w/Primary Flat Only & TTV <10, B & W <60µm Particles <10@.3µm
BC8136 173 6" P <100> 1 100 600 700 Test
    w/ US Primary Flat Only
BC38330 625 6" P <100> Any >=550 Reclaim
   
C2TC017 434 6" P <100> 1 100 Test
    w/ Primary Flat Only and Optional Laser Mark.
GC49266 100 6" P <100> .005 .08 1175 1225 Prime
    DSP w/V-Notch per U.S.Semi-Stds. & TTV <3µm.
HS18854 2075 6" P <100> 1 30 650 700 Prime
    w/Std. Notch, TTV <= 5µm
HS18909 668 6" P <100> 1 30 600 700 Prime
    w/Std. Notch
HS37809 300 6" P <100> .5 50 650 700
    6" P <100> .5-50 ohm-cm 650-700µm Thick SSP with 10,000 A°± 5% Thermal Oxide
HS38980 75 6" P <100> .5 50 650 700
    6" P <100> .5-50 ohm-cm 650-700µm Thick SSP w/ Primary Flat Only & 2,000 Ang.±5% Thermal Oxide
HS89121 50 6" P <100> 0 100 1150 1350 Prime
    SSP w/ Std.Notch, TTV <= 3µm
NP00-9881 89 6" P <100> .5 .75 650 700 Prime
    w/Primary Flat Only
FP02-61160 17 6" P <100> .001 .005 510 540
    6" P <100> .001-.005 ohm-cm 510-540µm Thick SSP w/Primary Flat Only, LTO Backseal
FP04-10107 125 6" P <100> 0 100 600 700 Test
    w/ Notch Only & 3,000 Ang. ± 5% Thermal Oxide
FP06-11973 25 6" P <100> 0 100 600 700 Test
    w/Primary Flat Only
FP16-18828 4 6" P <100> 0 100 600 700
    6" P <100> 0-100 ohm-cm 600-700µm Thick SSP w/ Notch Only
FP39-12574 125 6" P <100> >3,000 650 700 FZ
    Prime SSP w/Primary Flat Only, TTV <5µm
HP01-11598 2948 6" P <100> 1 50 600 700 Prime
    w/ Primary Flat only & LM on Frontside on Flat.
FP04-9897-2 75 6" P <100> <.5 1280 1300
    6" P <100> <.5 ohm-cm 1280-1300µm Thick Double Side Grind w/Std. Notch
3162085 6000 6" Any <Any> Any Ingot
    As-grown
STK9281 2334 6" Any <Any> 0 100 Any Etched
    Coinrolled with Primary Flat Only.
 

8" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
IN08-11685 616 8" N <100> 1 30 700 750
    8" N <100> 1-30 ohm-cm 700-750µm Thick SSP w/Std. Notch & 3,000 A° ± 10% Thermal Oxide
IN08-11860 1585 8" N <100> 1 30 700 750
    8" N <100> 1-30 ohm-cm 700-750µm Thick SSP w/Std. Notch
9911 25 8" P <100> 9 18 712 762 DSP
    w/Std. Notch & LM per U.S. Semi-Std.
7574-1 1275 8" P <100> .5 100 700 750 Test
    w/Notch & LM per Semi-Std.
HS18288 400 8" P <100> 0 50 585 775 Test
    w/Notch & 10,000 A° ±5% Thermal Oxide
HS18590 100 8" P <100> 0 100 760 890 Test
   
STK9500 2274 8" P <100> 10 25 700 750
    8" P <100> 10-25 ohm-cm, 700-750µm Thick SSP w/ Std. Notch & Soft BSD
WC98987 6600 8" P <100> 8 25 700 750 Prime
    SSP w/Std. Notch & LM Optional
BC118365 1225 8" P <100> 5 12 700 750
    8" P <100> 5-12 ohm-cm, 700-750µm Thick SSP w/Std. Notch & Backside LaserMark.
JK-82019 147 8" P <100> 2 4 710 740
    8" P <100> 2-4 ohm-cm 710-740µm Thick SSP w/Std. Notch & Backside LaserMark
JK-82058 125 8" P <100> >5000 700 750 FZ
    SSP Prime w/Std. Notch
STX10299 25 8" P <100> 1 100 700 750 Test
    SSP with Flat
OP00-9809 175 8" P <100> 0 100 675 775 Test
    w/Std. Notch and Backseal
OP00-9833 425 8" P <100> 1 100 700 750 Test
    w/Std. Notch
STK9500-2 25 8" P <100> 1 100 700 750 Prime
    SSP w/Std. Notch & LM.
HP01-T200SSP 1576 8" P <100> 0 100 700 750 Test
    w/Std. Notch and backseal
GC19195-OX 200 8" P <100> .5 100 700 750
    8" P <100> .5-100 ohm-cm 700-750µm Thick SSP w/Notch, LM & 10,000 A° ± 5% Thermal Oxide
GP08-13145 50 8" P <100> 10 25 650 750 DSP
    with Std. Notch
GP11-13193 50 8" P <111>off4° 4.5 6.5 700 750 Prime
    with Notch & Poly Backseal
OP03-11146 50 8" P <100> 10 25 700 750
    8" P <100> 10-25 ohm-cm 700-750µm Thick SSP w/ Notch & 2,000 A° ±5% Thermal Oxide
GC19195 10 8" Any <100> 0 100 650 750 Test
    w/Std. Notch, Particles <100 @.3µm
JK-11811 75 8" Any <100> 0 300 675 775
    8" Any Type <100> 0-300 ohm-cm, 675-775µm Thick, SSP with Std. Notch only.
HP01-T200R 13000 8" Any <100> 0 100 >700 Etched
    Edge-rounded Coinrolled w/Std. Notch
GP26-12991 50 8" P/Bo <100> >1000 710 740
    8" P/Bo <100> >1000 ohm-cm 710-740µm Thick SSP MCZ w/Semi-std Notch and Low Oxygen (<12ppma) & Low Carbon. FS by SEH.
 

12" Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
STK9754 25 12" P <100> 1 100 750 800 Prime
    w/Std Notch & No LM
PP01-9818 75 12" P <100>±1° 1 100 750 800 Litho
    w/Std. Notch & Semi-T7 LM
NP01-T300S 225 12" P <100> 1 100 750 800 Mechanical
    with Notch
 

Ingot Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
HS4962210 700 2.5" N <100> .14 .23 Ingot
    Ground
7244-69 1400 3" P <100> .01 .05 Ingot
    As-grown.
BC17967 2600 3" P <111> .014 .02 Ingot
    Ground & Flatted per U.S. Stds.
7244-1272 2300 3" P <111> <10 Ingot
    Ground, Flat & Mounted
CP17-10041 10200 3" P <100> 1 10 Ingot
    Ground w/0 Flats or 2 Flats per Semi-Stds.
7244-2718-923 15900 3" N/Sb <111> .005 .05 Ingot
    As-grown Ground & Flatted
7244-4682-126A 4000 4" N <111> <.020 Ingot
    As-grown Phosphorus doped
GC38892 15900 4" P <100> 1.3 3.7 Ingot
    Ground 1Flat per U.S. Semi-Stds.
HC49138 4400 4" P <111> .0015 .0035 Ingot
    Ground, flatted & mounted
GC38892-2 7140 4" P <100> 1.3 4.1 Ingot
    Ground 2 Flats per U.S. Semi-Stds.
7244-6014-859 7500 4" N+ <100> Any Ingot
    As-grown, Arsenic doped, Ground & Flatted
6416M 4009 5" P <100> .087 .092 Ingot
    Ground, Flatted w/2 Flats, V-notch on Primary Flat
7244-6691-2B 4100 5" P <100> <=.02 Ingot
    Ground w/2 Flats
7244-6013-427 2535 5" N+ <111> <=.007 Ingot
    Ground, Flatted & Mounted, Arsenic doped
7244-6013-633 20524 5" N+ <111> .001 .01 Ingot
    As-grown Arsenic doped with 3 Flats
WC109484 1500 6" N <110> 1 10 Ingot
    Ground w/ U.S. Primary Flat Only
GC38892-5 173895 6" N <100> .025 .07396 Ingot
    Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
3162085 6000 6" Any <Any> Any Ingot
    As-grown
 

Float Zone Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
8445 200 3" N <111> 6 12 245 325 FZ
    Test
CN01-10274 23 3" N <100>±.5° >3000 355 405 FZ
    Prime w/Primary Flat Only
CNE1-13067 741 3" N <100>±.5° >3000 445±10 FZ
    Etch/Etch w/Primary Flat Only
MS847A01 24 4" N <111> 5 10 500 550 FZ
    SSP w/2 Semi-Std. Flats
4N0-10848 3 4" N <100>±1° >5000 125 160 FZ
    DSP w/Primary Flat ,TTV <6µm, Bow/Warp <20µm
4N0-10854 14 4" N <100>±1° >5000 173 187 FZ
    Lapped, Etched & Edgerounded, w/Semi-Std. Primary Flat, TTV <6µm, Bow & Warp <20µm
CN05-13248 50 4" N/Ph <100> .1 1.0 500 550 FZ
    Prime SSP w/2 Semi-Std. Flats
HS39560-2 50 6" N <100> >1000 1143 1169 FZ
    DSP w/Primary Flat Only
FN06-11446 25 6" N <100> >1000 1143 1168.4 FZ
    DSP w/Primary Flat Only w/3000A° ±5% Thermal Oxide, 1500A° ±5% LPCVD SiN
FP39-12574 125 6" P <100> >3,000 650 700 FZ
    Prime SSP w/Primary Flat Only, TTV <5µm
JK-82058 125 8" P <100> >5000 700 750 FZ
    SSP Prime w/Std. Notch
 

Epi Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
BC88996 173 3" N <111>off3-4° >.01 356 406 Epi
    Prime , Epi layer= 7.5-10 ohm-cm 20-25µm
HC22001 23 4" N+ <Any> .0015 .003 Any Epi
    Layer N w/Any Resistivity & Thickness
 
 

SOI (Silicon-On-Insulator) Wafer Listing

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SOI material is used widely in applications such as telecommunication products and optical devices, dielectrically isolated integrated circuits, solid state relays and micro-machined components for sensors and actuators.

NOVA offers an innovative and powerful through-wafer interconnect technology which can allow device designers in both standard IC and MEMS device industries overcome packaging problems associated with their designs. NOVA offers a fully customized engineered substrate solution to minimize your fabrication headaches.

Typical Diameters range from 4" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Epitaxial Wafer Listing

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Epitaxial silicon wafers are made through the precipitation of a monocrystalline silicon coat. The substratum consists of a polished silicon wafer.

Epitaxial wafers are used for discrete applications and, because of their extraordinary quality as semiconductors, for the manufacturing of the most progressive and highly integrated semiconductor construction elements (ICs).

Typical Diameters range from 3" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Solar Wafer Listing

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NOVA creates significant competitive advantages, in terms of cost and quality, which are passed through the value chain of the entire silicon-based solar cell manufacturing market. The resulting single crystal wafers are manufactured and sold to meet the growing demands of the photovoltaic industry's major solar cell and module manufacturers, helping to further satisfy rapidly expanding end-user demand currently growing by 35 percent per year. Because NOVA's sources are designed for very high volume materials handling, as opposed to traditional precision semiconductor manufacturing that has been used to service the photovoltaic industry's silicon wafer needs in the past, NOVA can allow far better utilization of raw silicon feedstock at significantly lower cost within the supply chain.

Typical Diameters range from 3" to 125mm psuedo square to 300mm. Please contact NOVA's specialist or complete our Request a Quote form with your specifications so NOVA can quote your needs!