Silicon Wafer Materials

Silicon wafers are a matter of precision work. Silicon wafers form the basis of the most complex electronic components — from thyristors for high-voltage applications, through low-ohm circuit elements in automotive engineering and telecommunications, to large-scale integrated microprocessors and memory modules for information processing. Our longstanding cooperation and relationships with silicon wafer suppliers, which have grown over the years, have provided us with an in-depth knowledge of our customers and their requirements. Wherever possible, we strive to surpass our customers' expectations through specially tailored products and services. This strong customer orientation is reflected in a high level of appreciation and in our sound relationships with business partners. Please view our partial inventory listing or complete our Request a Quote form for NOVA to supply your needs!

We offer silicon wafer products such as:

  1"-2" Wafers
3" Wafers
4" Wafers
5" Wafers
6" Wafers
8" Wafers 		  12" Wafers
Ingot
Float Zone (FZ) Wafers
SOI (Silicon-On-Insulator) Wafers
Epi Wafers
Solar Wafers



If you see an item that you would like us to give you a quote on, check the "Add Cart" boxes. When you have all the items selected that you would like a quote for, click on the Quote Cart button. Please browse through one of our silicon wafer product categories to view our partial inventory for immediate delivery.


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NOVA offers the best competitive pricing without sacrificing quality. No order is too big or too small for us to handle. Contact Us today.






1"-2" Wafer Listing

 Top of Page Quote Cart Print 1"-2" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
HS18810 108 1" N <100> 1 10 660 711 Test
    w/ Rectangle to "U" Shape Notch & 3,000 A° ±5% Thermal Oxide.
8289 125 2" P <100> 1 10 254 306 Test
    w/ Primary Flat only.
HS4962210 1300 2.5" N <100> .14 .23 Ingot
    Ground
 

3" Wafer Listing

 Top of Page Quote Cart Print 3" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
8445 200 3" N <111> 6 12 245 325 FZ
    Test
BC3032 73 3" N <111> .05 .1 300 406 As-cut
    Coin-roll
WC3048 175 3" N <111>off3-4° .005 .05 355 405 Prime
    SSP w/2 Semi-Std. Flats
BC88996 173 3" N <111>off3-4° >.01 356 406 Epi
    Prime , Epi layer= 7.5-10 ohm-cm 20-25µm
WC37620-NV (B) 200 3" N <100> 1 10 356 406 Prime
    w/ 2 Semi-Std Flats
BC971942~P1 25 3" N <111>off1-5° .005 .02 305 457 Test
    w/2 Flats
WC37620-NV 50 3" N <100> 1 10 356 406 Prime
    w/Primary Flat Only
WC6163 125 3" P <100> .2 5 >250 Test
    Round , No Flat
7244-69 1400 3" P <100> .01 .05 Ingot
    As-grown Ground & 2 Flats
BC17967 5000 3" P <111> .014 .02 Ingot
    Ground & Flatted per U.S. Stds.
WC27806 450 3" P <100> 1 10 356 406 Prime
    w/2 Semi-Std Flats
7244-1272 2300 3" P <111> <10 Ingot
    Ground, Flat & Mounted
WC5201~P1 10 3" P <100> 1 10 575 625 DSP
    Prime w/Semi-Std. Flats & TTV </= 2.5µm
CP02-11208 475 3" P <100> .001 .005 356 406 Prime
    w/2 Semi-Std. Flats
CP17-10041 10200 3" P <100> 1 10 Ingot
    Ground w/0 Flats or 2 Flats per Semi-Stds.
CA05-11645 475 3" Any 508 534
    3" Any Type, Orientation, Resistivity, 508-534µm Thick As-Cut Non Edge-rounded w/2 Semi-Std. Flats, Rinse SC1 Clean & Dry.
CP03-10685 100 3" Any <Any> Any 575 625 Test
    w/2 Semi-Std. Flats
HC40561 28 3" N/Ph <110> Ge
    As-cut Edgerounded Wafer w/2 Flats
7244-2718-923 15900 3" N/Sb <111> .005 .05 Ingot
    As-grown Ground & Flatted
CA02-10016 3 3" N(Te) <100> 480 520 GaAs
    Wafer, cc:2.3E18, Mobility: 2370, EPD: 4E4, w/1 Flat & TTV <3µm.
 

4" Wafer Listing

 Top of Page Quote Cart Print 4" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
7329 25 4" N <100> 1 15 275 325 DSP
    Prime w/Semi-Std. Flats
HC44001 13 4" N <111> 5 50 635 686 Ge
    As-cut Wafer
HC44002 25 4" N <111> 5 40 762 813 Ge
    As-cut Wafer
HC44003 49 4" N <111> 5 40 762 813 Ge
    As-cut Wafer
HC44004 12 4" N <Any> 5 40 1016 1067 Ge
    As-cut Coin-rolled Wafer
STK8414 25 4" N <100> 1 10 500 550 Prime
    w/2 Semi-Std. Flats
4N0-10848 4 4" N <100>±1° >5000 125 160 FZ
    DSP w/Primary Flat ,TTV <6µm, Bow/Warp <20µm
4N0-10854 17 4" N <100>±1° >5000 173 187 FZ
    Lapped, Etched & Edgerounded, w/Semi-Std. Primary Flat, TTV <6µm, Bow & Warp <20µm
7244-4682-126A 4000 4" N <111> <.020 Ingot
    As-grown Phosphorus doped
DN03-10624 100 4" N <100> .001 .005 500 550 Prime
    w/2 Semi-Std. Flats
7358 75 4" P <100> 5 25 500 550 Prime
    w/2 Semi-Std. Flats
7375 650 4" P <100> 1 25 400 500 Test
    w/2 Flats, LPD's <30 @.5µm
BC79114 525 4" P <100> 1 10 500 550 DSP
    w/2 Semi-Std. Flats
GC38892 27415 4" P <100> 1.3 3.7 Ingot
    Ground 1Flat per U.S. Semi-Stds.
HC49138 8100 4" P <111> .0015 .0035 Ingot
    Ground, flatted & mounted
HS39626 50 4" P <100> .001 .005 500 550 Prime
    w/Semi-Std Flats
STK9671 36 4" P <100> 1 10 500 550 Test
    w/Semi-Std. Flats
SOI11000 29 4" P <100> 1 10 280 320 SOI
    CZ Handle DSP w/o oxide, Box: 1.4-2.1µm Thermal, Device 1-10 ohm-cm 35-40µm, TTV <10µm
GC38892-2 7140 4" P <100> 1.3 4.1 Ingot
    Ground 2 Flats per U.S. Semi-Stds.
STK8414-2 425 4" P <100> 1 10 500 550 Prime
    w/2 Semi-Std. Flats
4A01-11732 500 4" x
    4" x 4" x 0.70mm Glass Borosilicate Wafer No Bevels, Surface Quality 80/50
HC22001 23 4" N+ <Any> .0015 .003 Any Epi
    Layer N w/Any Resistivity & Thickness
7244-6014-859 9400 4" N+ <100> Any Ingot
    As-grown, Arsenic doped, Ground & Flatted
DN10-40155 23 4" N+ <100> .007 .020 375 425 Epi
    w/Oxide backs, Layer N 2.53-2.97 ohm-cm 15.437-17.062µm
 

5" Wafer Listing

 Top of Page Quote Cart Print 5" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
7479-1 409 5" N <100> 1 10 380 405 Etched
    Edge-rounded, Coin-rolled w/ 2 Semi-std Flats & LM
EN1-11139 50 5" N <111>off2-3° 4 7 600 650 Prime
    w/ Primary Flat only
EN03-SOI9554 17 5" N <100>±1° 3 10 620 630 SOI
    FZ Handle SSP, Box .425-.475µm Thermal Oxide, Device 2.3-2.5 ohm-cm, 19-21µm Thick w/2 Flats
EN03-10345 25 5" N <100>±1° 3 10 615 630 Prime
    w/Primary Flat Only TTV <2µm, B & W<40
EN03-10346 50 5" N <100>± 2.5 5.5 615 635 Prime
    w/ Primary Flat Only TTV<2µm, B & W<40
7387 89 5" P <100> 42 52.1 725 750 As-cut
    w/2 Flats, Primary Flat has V-notch
6416M 4009 5" P <100> .087 .092 Ingot
    Ground, Flatted w/2 Flats, V-notch on Primary Flat
73871 44 5" P <100> >100 630 730 Lapped
    Edge-rounded Coin-rolled w/2 Flats, Primary Flat has V-notch
7285-2 50 5" P <111> .01 .02 600 650 Prime
    w/Primary Flat & Etched backs
7479-3 108 5" P <100> 1 10 380 405 Etched
    Edge-rounded Coinrolled w/2 Flats & LM
7244-6691-2B 4100 5" P <100> <=.02 Ingot
    Ground w/2 Flats
GC211001-4 163 5" P <100> .01 .02 600 700 Etched
    Coinrolled w/Primary Flat Only & Oxide backseal
7244-6013-427 2535 5" N+ <111> <=.007 Ingot
    Ground, Flatted & Mounted, Arsenic doped
7244-6013-633 20524 5" N+ <111> .001 .01 Ingot
    As-grown Arsenic doped with 3 Flats
 

6" Wafer Listing

 Top of Page Quote Cart Print 6" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
FA01-9900 4 6" x.75mm Pyrex
    wafers with Edges Seamed, for Customer Evaluation of Edge Seam vs. Bevel (pencil).
WC109484 1500 6" N <110> 1 10 Ingot
    Ground w/ U.S. Primary Flat Only
GC38892-5 206245 6" N <100> .025 .07396 Ingot
    Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
HS39560-2 72 6" N <100> >1000 1143 1169 FZ
    DSP w/Primary Flat Only
FN05-11654 125 6" N <100> 0 100 575 700 Test
    w/ Primary Flat only.
FN06-11446 25 6" N <100> >1000 1143 1168.4 FZ
    DSP w/Primary Flat Only with 3,000 A°±5% Thermal Ox. & 1500A LPCVD SiN (handled w/tweezers)
FP02-10467 9 6" N <100> .008 .02 165 191 Test
    w/Primary Flat Only & TTV </= 8µm, Coin-roll w/paper
7448 275 6" P <100> .5 50 645 705 Test
    w/ US Primary Flat Only & 2,000 Ang.±5% Thermal Oxide
7467 44 6" P <100> 5 30 625 725 Test
    w/Primary Flat Only & TTV <10, B & W <60µm Particles <10@.3µm
9834 129 6" P <110>±1° 10 20 610 640 Prime
    w/1 Flat 47.5±2.5mm, Global Flatness <4µm with LaserMark
7296~P1 25 6" P <100> 1000 2000 650 700 FZ
    DSP
BC38330 981 6" P <100> Any >=550 Reclaim
   
HS18004 18 6" P <100> 1 50 600 650 Prime
    w/Primary Flat, .35µm Stepped Masking, Resist Strip, Dry Etch up to 1µm Trench
HS18854 25 6" P <100> 1 30 650 700 Prime
    w/Std. Notch, TTV <= 5µm
HS38780 275 6" P <100> .5 50 645 705 Test
    w/Primary Flat Only & 10,000 A°±5% Thermal Oxide
WC78987 450 6" P <100> 1 50 650 700 Prime
    w/ Primary Flat Only & TTV <5µm
WC99755 25 6" P <100> >1 710 740 Test
    w/Primary Flat Only & Etched Backs
FP04-10107 300 6" P <100> 0 100 600 700 Test
    w/ Notch Only & 3,000 Ang. ± 5% Thermal Oxide
FP06-11973 400 6" P <100> 0 100 600 700 Test
    w/Primary Flat Only
FP14-12522 100 6" P <100> 0 100 600 700 Test
    with Std. Notch
FP16-18828 504 6" P <100> 0 100 600 700
    6" P <100> 0-100 ohm-cm 600-700µm Thick SSP w/ Notch Only
HP01-11598 2875 6" P <100> 1 50 650 700 Prime
    w/ Primary Flat only & LM on Frontside on Flat.
3162085 6000 6" Any <Any> Any Ingot
    As-grown
STK9281 14296 6" Any <Any> 0 100 Any Etched
    Coinrolled with Primary Flat Only.
FA01-11810 200 6" Any
    6" Any Type, Orientation, Resistivity & Thickness with Notch & Surface Defects, Particles <50 @ .5µm
FP31-12277 48 6" P/Bo <100> <.005 600 650 Test
    w/ Primary Flat Only
 

8" Wafer Listing

 Top of Page Quote Cart Print 8" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
IN08-11685 14 8" N <100> 1 30 700 750
    8" N <100> 1-30 ohm-cm 700-750µm Thick SSP w/Std. Notch & 3,000 A° ± 10% Thermal Oxide
IN08-11860 50 8" N <100> 1 30 700 750
    8" N <100> 1-30 ohm-cm 700-750µm Thick SSP w/Std. Notch
9911 175 8" P <100> 9 18 712 762 DSP
    w/Std. Notch & LM per U.S. Semi-Std.
7574-1 1825 8" P <100> .5 100 700 750 Test
    w/Notch & LM per Semi-Std.
HS18590 150 8" P <100> 0 100 760 890 Test
   
OP00-9833 25 8" P <100> 1 100 700 750 Test
    w/Std. Notch
STK9500-2 500 8" P <100> 1 100 700 750 Prime
    SSP w/Std. Notch & LM.
HP01-T200SSP 550 8" P <100> 0 100 700 750 Test
    w/Std. Notch and backseal
GC19195 10 8" Any <100> 0 100 650 750 Test
    w/Std. Notch, Particles <100 @.3µm
JK-11811 725 8" Any <100> 0 300 675 775
    8" Any Type <100> 0-300 ohm-cm, 675-775µm Thick, SSP with Std. Notch only.
HP01-T200R 2235 8" Any <100> 0 100 >700 Etched
    Edge-rounded Coinrolled w/Std. Notch
 

12" Wafer Listing

 Top of Page Quote Cart Print 12" Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
STK9754 25 12" P <100> 1 100 750 800 Prime
    w/Std Notch & No LM
PP01-9818 100 12" P <100>±1° 1 100 750 800 Litho
    w/Std. Notch & Semi-T7 LM
NP01-T300S 425 12" P <100> 1 100 750 800 Mechanical
    with Notch
 

Ingot Wafer Listing

 Top of Page Quote Cart Print Ingot Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
HS4962210 1300 2.5" N <100> .14 .23 Ingot
    Ground
7244-69 1400 3" P <100> .01 .05 Ingot
    As-grown Ground & 2 Flats
BC17967 5000 3" P <111> .014 .02 Ingot
    Ground & Flatted per U.S. Stds.
7244-1272 2300 3" P <111> <10 Ingot
    Ground, Flat & Mounted
CP17-10041 10200 3" P <100> 1 10 Ingot
    Ground w/0 Flats or 2 Flats per Semi-Stds.
7244-2718-923 15900 3" N/Sb <111> .005 .05 Ingot
    As-grown Ground & Flatted
7244-4682-126A 4000 4" N <111> <.020 Ingot
    As-grown Phosphorus doped
GC38892 27415 4" P <100> 1.3 3.7 Ingot
    Ground 1Flat per U.S. Semi-Stds.
HC49138 8100 4" P <111> .0015 .0035 Ingot
    Ground, flatted & mounted
GC38892-2 7140 4" P <100> 1.3 4.1 Ingot
    Ground 2 Flats per U.S. Semi-Stds.
7244-6014-859 9400 4" N+ <100> Any Ingot
    As-grown, Arsenic doped, Ground & Flatted
6416M 4009 5" P <100> .087 .092 Ingot
    Ground, Flatted w/2 Flats, V-notch on Primary Flat
7244-6691-2B 4100 5" P <100> <=.02 Ingot
    Ground w/2 Flats
7244-6013-427 2535 5" N+ <111> <=.007 Ingot
    Ground, Flatted & Mounted, Arsenic doped
7244-6013-633 20524 5" N+ <111> .001 .01 Ingot
    As-grown Arsenic doped with 3 Flats
WC109484 1500 6" N <110> 1 10 Ingot
    Ground w/ U.S. Primary Flat Only
GC38892-5 206245 6" N <100> .025 .07396 Ingot
    Ground & 1 Flat per U.S. Semi-Stds., Antimony doped
3162085 6000 6" Any <Any> Any Ingot
    As-grown
 

Float Zone Wafer Listing

 Top of Page Quote Cart Print Float Zone Listing
Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
8445 200 3" N <111> 6 12 245 325 FZ
    Test
4N0-10848 4 4" N <100>±1° >5000 125 160 FZ
    DSP w/Primary Flat ,TTV <6µm, Bow/Warp <20µm
4N0-10854 17 4" N <100>±1° >5000 173 187 FZ
    Lapped, Etched & Edgerounded, w/Semi-Std. Primary Flat, TTV <6µm, Bow & Warp <20µm
HS39560-2 72 6" N <100> >1000 1143 1169 FZ
    DSP w/Primary Flat Only
FN06-11446 25 6" N <100> >1000 1143 1168.4 FZ
    DSP w/Primary Flat Only with 3,000 A°±5% Thermal Ox. & 1500A LPCVD SiN (handled w/tweezers)
7296~P1 25 6" P <100> 1000 2000 650 700 FZ
    DSP
 

Epi Wafer Listing

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Add   Qty on       Resistivity Thickness  
Cart Item ID Hand Diameter Type Orientation Min. Max. Min. Max. Grade
BC88996 173 3" N <111>off3-4° >.01 356 406 Epi
    Prime , Epi layer= 7.5-10 ohm-cm 20-25µm
HC22001 23 4" N+ <Any> .0015 .003 Any Epi
    Layer N w/Any Resistivity & Thickness
DN10-40155 23 4" N+ <100> .007 .020 375 425 Epi
    w/Oxide backs, Layer N 2.53-2.97 ohm-cm 15.437-17.062µm
 
 

SOI (Silicon-On-Insulator) Wafer Listing

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SOI material is used widely in applications such as telecommunication products and optical devices, dielectrically isolated integrated circuits, solid state relays and micro-machined components for sensors and actuators.

NOVA offers an innovative and powerful through-wafer interconnect technology which can allow device designers in both standard IC and MEMS device industries overcome packaging problems associated with their designs. NOVA offers a fully customized engineered substrate solution to minimize your fabrication headaches.

Typical Diameters range from 4" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Epitaxial Wafer Listing

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Epitaxial silicon wafers are made through the precipitation of a monocrystalline silicon coat. The substratum consists of a polished silicon wafer.

Epitaxial wafers are used for discrete applications and, because of their extraordinary quality as semiconductors, for the manufacturing of the most progressive and highly integrated semiconductor construction elements (ICs).

Typical Diameters range from 3" to 300mm. Please complete our Request a Quote form with your specifications so NOVA can quote your needs!
 
 

Solar Wafer Listing

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NOVA creates significant competitive advantages, in terms of cost and quality, which are passed through the value chain of the entire silicon-based solar cell manufacturing market. The resulting single crystal wafers are manufactured and sold to meet the growing demands of the photovoltaic industry's major solar cell and module manufacturers, helping to further satisfy rapidly expanding end-user demand currently growing by 35 percent per year. Because NOVA's sources are designed for very high volume materials handling, as opposed to traditional precision semiconductor manufacturing that has been used to service the photovoltaic industry's silicon wafer needs in the past, NOVA can allow far better utilization of raw silicon feedstock at significantly lower cost within the supply chain.

Typical Diameters range from 3" to 125mm psuedo square to 300mm. Please contact NOVA's specialist or complete our Request a Quote form with your specifications so NOVA can quote your needs!